http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-215339630-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2a0413b5165267fdfc7796e1ebc2ca9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 2021-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10c833294afb857a91d1adf6c702dd3c |
| publicationDate | 2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-215339630-U |
| titleOfInvention | Homojunction film gas sensor |
| abstract | The utility model discloses a homojunction film gas sensor which comprises a substrate, a pn homojunction zinc oxide film, an electrode layer and a gas-sensitive layer which are sequentially arranged from bottom to top, wherein the pn homojunction zinc oxide film comprises an n-type semiconductor film and a p-type semiconductor film formed on the top of the n-type semiconductor film. The utility model can realize the reaction of CO and C at room temperature 2 H 5 OH、H 2 、NO 2 And the like, so as to make up for the fatal defect of the rapid decline of the sensing performance caused by the instability of the pn junction film in the production and application of similar products. |
| priorityDate | 2021-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.