http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-215209603-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a751a897c7970eff24db2785039975d0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 |
| filingDate | 2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cb114aaed5d02487576d93884fc5690 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f1e3cf0fa7bc992ac735c66c1abd714 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9797d596ad37ead6a583a7b712e357b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fadf60730b4a1959b1982173788dffa |
| publicationDate | 2021-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-215209603-U |
| titleOfInvention | Ion-assisted, tilted sputtering PVD system |
| abstract | The utility model discloses an ion-assisted and inclined sputtering PVD system, which comprises a chamber, wherein a plasma source, a target bracket and a substrate objective table are arranged in the chamber, the front periphery of the substrate carrying table is provided with a gas spraying unit which comprises a gas spraying ring, the middle of the substrate carrying table corresponding to the gas spraying ring is used for placing a substrate, the gas spraying unit also comprises a plurality of spray holes which are uniformly distributed along the circumference at the inner side of the gas spraying ring, the gas injection ring is provided with an air passage communicated with the injection holes, the utility model is provided with a gas spraying unit which can be used for injecting processing gas such as oxygen, to promote chemical reactions between the process gas and particles sputtered from the target during sputter deposition, the orifices may be uniformly distributed along the length of the gas tube so that the chemical reactions may proceed substantially uniformly across the surface of the wafer. |
| priorityDate | 2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.