http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-213845300-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8a8a5ffc54cd6736286e6a89c9c76b7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate | 2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5406f288beec7456b0477a8dd3293345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4751922312712d9d74b1a07e5f66eba0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac793e110abdd37819ee37d058a349b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b598d27238ac110f829088dda6c6bbdd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4b1cf7c4a237cec5252f01c4d1a3b53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6eae55f66c2d9daeefb04cf8ade8669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7c678a1c532c96f1167ddf7bbe09cf5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaeb759304ab6b39b2500bda9b399de6 |
| publicationDate | 2021-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-213845300-U |
| titleOfInvention | Light emitting diode |
| abstract | The utility model provides a light-emitting diode, it includes the luminous stromatolite of semiconductor, first electrode and second electrode, wherein the luminous stromatolite of semiconductor has relative first surface, second surface and connects the lateral wall of this first surface and second surface, contains first conductivity type semiconductor layer, active layer and second conductivity type semiconductor layer, first electrode and second electrode are located the luminous stromatolite of semiconductor on the first surface, and the interval between the two is 80 mu m below, the lateral wall of the luminous stromatolite of semiconductor and electrode lateral wall cover have first insulating layer and the second insulating layer of piling up in turn, and wherein first insulating layer is silicon nitride, and its thickness is 2~100nm, are located the luminous stromatolite of semiconductor with between the second insulating layer, the second insulating layer is silicon oxide or aluminium oxide, and its thickness is 50~500 nm. |
| priorityDate | 2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.