http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-211455647-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9db08265ea94530cc5e1873b27eecd1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae06eec52fc8e31239e20b2cdc29ff72 |
| publicationDate | 2020-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-211455647-U |
| titleOfInvention | Gallium nitride MISHEMT structure |
| abstract | The utility model provides a gallium nitride MISHEMT structure, which comprises a wafer, wherein the wafer is formed with source metal, drain metal and gate metal, a first insulating medium layer covers the source metal, the drain metal and the gate metal, the first insulating medium layer is respectively provided with an opening at the corresponding position of the source metal and the drain metal and is internally provided with first linking metal, a first source metal field plate and a first drain metal field plate cover the first linking metal, a second insulating medium layer covers the first source metal field plate, the first drain metal field plate and the exposed first insulating medium layer, the second insulating medium layer is respectively provided with an opening at the corresponding position of the source metal and the drain metal and is internally provided with second linking metal, the surface of the second linking metal is covered with a second source metal field plate and a second drain metal field plate, passivation layers are covered on the surfaces of the second source electrode metal field plate and the second drain electrode metal field plate, so that the pressure resistance of the device can be effectively improved. |
| priorityDate | 2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.