http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-210245484-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_747ac29fc910853bb66b4d341bed0a0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0d94e75554cdfe8d9217b2ce08e156f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91f9a42e7f6624d22f4a376b3cd50981 |
| publicationDate | 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-210245484-U |
| titleOfInvention | SOI structure with high voltage resistance and high heat dissipation performance |
| abstract | The utility model discloses a high withstand voltage high heat dissipating's SOI structure. The silicon-based composite structure comprises top silicon, a composite insulating layer and a back substrate, wherein the top silicon, the composite insulating layer and the back substrate are sequentially arranged from top to bottom, the composite insulating layer mainly comprises a silicon dioxide layer, a boron nitride layer, a hafnium oxide layer and fluorine silicon oxide layers positioned on two sides of the composite structure, the top silicon mainly comprises a first silicon wafer layer, and the back substrate mainly comprises a silicon layer and a second silicon wafer layer; the first silicon chip layer is arranged on the silicon dioxide layer, the boron nitride layer is arranged in the center of the lower surface of the silicon dioxide layer, the hafnium oxide layer is arranged below the boron nitride layer, the silicon layer is arranged below the hafnium oxide layer, and the silicon oxyfluoride layer is uniformly arranged between the silicon layer and the silicon dioxide layer on two sides of the boron nitride layer and the hafnium oxide layer. The utility model discloses the structure can help improving the pressure resistance of device, improves the heat dispersion of SOI, improves the insulating properties of SOI simultaneously. |
| priorityDate | 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.