http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-210200747-U

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232
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filingDate 2019-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02f97efc2d8ee543919445f011380b63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fbecf966d21f753652d1fb7d79b9d0d
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publicationDate 2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-210200747-U
titleOfInvention PN junction and semiconductor thin film assembly comprising same
abstract The utility model relates to a PN junction and contain its semiconductor film assembly, and contain semiconductor film assembly's photoelectric sensing module and extensive use thereof. The PN junction comprises a P-type CIGS semiconductor filmThe N-type CIGS semiconductor thin film layer is composed of elements such as CIGS, wherein the molar ratio of copper to indium is In the range of 1.1-1.5, and the chemical formula of the copper is Cu (In) x Ga 1‑x )Se 2 Wherein x has a value in the range of 0.6 to 0.9. The method for preparing the PN junction uses a quaternary target material, is a dry process, does not need selenization treatment and can manufacture the PN junction on a flexible substrate.
priorityDate 2019-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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