http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-209447835-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a12ae1b33faa44bf36c804abcf4a03fc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0f38706196e32f410ce60db2d64c39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07866a6bfe60ff64b705869d84cd319 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4022e19d75cc8e92734c3d0f5658b93f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a023f3130db489e2d0a3bf924c31f760 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_560fe6e5d13d97f2372e33ffcd9a7d7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e18b193a83589337a3cacf0711b96dda |
| publicationDate | 2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-209447835-U |
| titleOfInvention | A kind of epitaxial structure of LED |
| abstract | The embodiment of the present application discloses the epitaxial structure of LED a kind of, the epitaxial structure includes: substrate, buffer layer, layer of undoped gan, n-type doping GaN layer, superlattice structure, multiple quantum well layer, current extending and p-type doped gan layer, wherein, the superlattice structure is cheated towards one side surface of multiple quantum well layer with multiple V-arrangements；The superlattice structure includes the superlattices unit of at least two stackings, the superlattices unit include: shallow well layer, positioned at the shallow well layer towards the p-type doped shallow barrier layer of n-type doping GaN layer side, between the shallow well layer and the p-type doped shallow barrier layer undoped with shallow barrier layer and positioned at the undoped shallow barrier layer of n-type doping between shallow barrier layer and the shallow well layer.The epitaxial structure of the LED, not only luminous efficiency is high, but also antistatic effect is strong. |
| priorityDate | 2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.