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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
filingDate 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6ec5ee4d3e6b5d5285571819cb0fba5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4ca678dc3501e264e2b614896784d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_385e5fb1ac1ccff0e0c8b8b8ebff8115
publicationDate 2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-209374478-U
titleOfInvention A kind of micro-led device
abstract The utility model provides a kind of light emitting diode epitaxial structure, it includes epitaxial substrate, the epitaxial semiconductor stepped construction in epitaxial substrate, the pyrolytic layer being set in epitaxial semiconductor stepped construction, and semiconductor stacked structure includes first kind conductive semiconductor layer, luminescent layer and Second Type conductive semiconductor layer;A kind of and micro-led device, comprising: the micro- light emitting diode supported on the pyrolytic layer, pyrolytic layer on supporting substrate, supporting substrate;Micro- light emitting diode includes the first electrode that first kind conductive semiconductor layer, luminescent layer and Second Type conductive semiconductor layer and first kind conductive semiconductor layer are electrically connected and the second electrode being electrically connected with Second Type conductive semiconductor layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114497314-B
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priorityDate 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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