http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-208970550-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d487c8096c88b441a31a8d3555598c7b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2018-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_806d69038d4d7e61e32d51ee6d511f0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f61216b74186160e8becfc9bfe46e59 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8695b62d50f50a44c4a7decd01b5fb62 |
| publicationDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-208970550-U |
| titleOfInvention | Semi-polarity gallium nitride single quantum well luminescent device |
| abstract | This disclosure relates to a kind of semi-polarity gallium nitride single quantum well luminescent device comprising: n type gallium nitride layer；P-type gallium nitride layer；And single quantum well active coating, between n type gallium nitride layer and p-type gallium nitride layer, the single quantum well material is In x Ga y N 1‑x‑y , wherein along from n type gallium nitride layer, to the thickness direction of p-type gallium nitride layer, the single quantum well active coating single quantum well material is In x Ga y N 1‑x‑y In x be gradually increased. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109390443-A |
| priorityDate | 2018-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.