http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-208969198-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36b88aa429287e0fa1df060c9ee454f0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-02 |
| filingDate | 2018-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6be138f4bed4a2406bdc6be2959203c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_147c47e2cd4cb062b0b2537ec8193d2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6820b1dd3ceff2ad4163c3fb32e31ef1 |
| publicationDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-208969198-U |
| titleOfInvention | The objective table of probe station |
| abstract | The utility model relates to semiconductor detection fields, aiming at the problem that silver layer damage, provide a kind of objective table of probe station, the technical solution is as follows: including pedestal and being horizontally placed on pedestal and holds object plate, holding object plate includes support plate, support plate recess has blind hole, blind hole diameter is greater than the maximum length of semiconductor element to be measured, holding object plate further includes the elastic layer placed for semiconductor element to be measured, elastic layer is covered on above support plate and closing blind hole, elastic layer is fixedly connected with support plate, support plate is equipped with the gas tube of connection blind hole, gas tube is communicated with the logical valve for closing gas tube.Pass through the elastic deformation of elastic layer, so that elastic layer is larger to the active area of the reaction force of semiconductor element to be measured, the case where silver layer on semiconductor element to be measured is caused pressure larger and then leads to dark line, mark, cracking by by-local forces concentration is reduced, guarantees semiconductor element better quality. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111257717-A |
| priorityDate | 2018-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.