http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-208904029-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f378e2bf2ba2dcda649d83ce3714987b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate | 2018-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1d4cb559ca98392b82783637e96fe4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67839a15fec0a26ac7b997d39cd8cd3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2baf7ef9782a2d3ab057e03678c5e66f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1acfc507ff1a5e8854e19cdd431502fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c525ad16f836dc26d1d3a87a40c6a05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_589b703cc00b9c1554397fc5e6e122fb |
| publicationDate | 2019-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-208904029-U |
| titleOfInvention | The mercury cadmium telluride avalanche diode detector of modulated surface energy band |
| abstract | Patent discloses a kind of mercury cadmium telluride avalanche diode detector of modulated surface energy band, it can reach the effect of modulation passivation layer and mercury cadmium telluride interface pn-junction energy band by increasing electrode above pn-junction depletion region passivation layer, passivation layer and mercury cadmium telluride interface pn-junction made to tend to flat rubber belting state to inhibit the tracking currents such as surface generation-compound, surface tunnelling.There is the detector modulated pn-junction area surface energy band it to be made to tend to flat rubber belting state, the advantages of inhibiting tracking current to make diode operation work under reversed big bias with Geiger mode angular position digitizer, the mercury cadmium telluride avalanche diode device of conventional structure is advantageously accounted for when reverse biased is greater than avalanche breakdown voltage, it can be because there are biggish leakage currents on surface, cause photodiode that thermoelectricity breakdown occurs, the problem of carrying out signal detection with linear model can only be met by limiting it. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911520-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110660878-A |
| priorityDate | 2018-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.