http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-207602548-U
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbfb45eac8bfff58a6e5cf47fda5bad8 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4903 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate | 2017-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0983e74c2542ff3474790a8970af91e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e1231af6c3885a6ca9b3a8fdbd703dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c359f7a83a0b81958929e51d8c23649 |
publicationDate | 2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-207602548-U |
titleOfInvention | Semiconductor components and devices |
abstract | The utility model discloses a kind of semiconductor components and devices, including carrying core plate, operating die, SBD chips, gate lead and drain lead, operating die and SBD chips, which are set on, to be carried on core plate, it carries core plate and is equipped with source lead, operating die is electrically connected respectively with gate lead, drain lead and source lead, the cathode of SBD chips is electrically connected with the circuit carried on core plate, and anode and the drain lead of SBD chips are electrically connected, and operating die and SBD chips are gallium nitride chip.Above-mentioned semiconductor components and devices, SBD chips and operating die are gallium nitride chip, can high temperature resistant, while SBD chips can prevent operating die breakdown, no matter higher or when operating voltage is excessively high in operating temperature, will not all be damaged, job stability is higher. |
priorityDate | 2017-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559 |
Total number of triples: 21.