http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-207164199-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5456846495c5fa8a02f5eaae9faae290 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a0174bb8f432e7f3f5db5edab992bff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6e13704d3d99af64ba57062e505bebe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a11be56a1167e1e4764a38974260e973 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6073bcc8bf460abe80e01d017e835d04 |
| publicationDate | 2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-207164199-U |
| titleOfInvention | A kind of metal-semiconductor contact experimental provision |
| abstract | The utility model discloses a kind of metal-semiconductor contact experimental provision, including bottom plate and top plate, the bottom plate is fixedly connected with top plate by the riser of the left and right sides, teflon insulation pad is provided with bottom plate, semiconductor samples are provided with teflon insulation pad, it is coated with multiple metal electrode layers side by side on semiconductor samples, the metal electrode layer is rectangular and gradually increases from the spacing between right-to-left adjacent metal electrode layer, on top plate perforation is equipped with metal electrode layer position corresponding section, conducting rod is slidably connected in perforation, square conducting rod is provided with baffle ring under the top plate, spring is arranged with conducting rod between baffle ring and top plate bottom, connector lug is provided with the top of conducting rod, the bottom of conducting rod is provided with electrode tip, electrode tip is located at the surface of corresponding metal electrode layer；Realize to the quick judgement of metal-semiconductor contact type and the measurement of Ohmic resistance. |
| priorityDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.