http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-206864867-U

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
filingDate 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d49b898656506509dba2b5bfecb3e798
publicationDate 2018-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-206864867-U
titleOfInvention A kind of epitaxial structure of near-infrared VCSEL lasers
abstract The utility model provides a kind of epitaxial structure of near-infrared VCSEL lasers, including GaAs substrates, GaAs cushions, the DBR of n-type doping, active layer, oxidation limiting layer, the DBR and ohmic contact layer of p-type doping are sequentially depositing on gaas substrates, the active layer includes limiting layer successively from bottom to top, ducting layer, SQW, symmetrical ducting layer and symmetrical limiting layer, the SQW is made up of multigroup quantum well layer, thick barrier layer is provided between two adjacent groups quantum well layer, the thickness of the thick barrier layer is more than 50nm.The epitaxial structure of near-infrared VCSEL lasers reduces the leakage loss of carrier by inserting multi-layer thick barrier layer in active area SQW, improve the recombination probability of active area carrier, improve the differential gain of active area, so as to improve the radiant power of VCSEL lasers, the restriction factor of active area photon is added simultaneously, improves the speed of response of VCSEL lasers.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112563376-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112563884-A
priorityDate 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.