http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-206742273-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fbb91e3f8cdf858527814216aa11142 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3407a8e6d8ad436298e00dcea2a03794 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff1bf2a17668258e7964a13e322a0bf3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91959b1ae3e534144863dbc39f72b6a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f57f557e43871c98357abb31fe804e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6af63c279e5cee920565d36de0782e82 |
| publicationDate | 2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-206742273-U |
| titleOfInvention | A kind of epitaxial structure for realizing short wavelength UV LED |
| abstract | The utility model discloses a kind of epitaxial structure for realizing short wavelength UV LED,The epitaxial structure includes the substrate set gradually from bottom to top,GaN cushions,Undoped with GaN layer,Doped N-type GaN layer,MQW AlGaN/GaN layers,P-type AlGaN electronic barrier layers,Gradual change p-type AlGaN layer and p-type GaN layer,The substrate is Sapphire Substrate,The thickness of the GaN cushions is 20~25nm,Growth temperature is 530 550 DEG C,And recrystallize 68 minutes GaN cushions in 1,030 1080 DEG C of constant temperature,It is described undoped with GaN layer thickness be 2.0~2.5 μm,Growth temperature is 1,030 1080 DEG C,The thickness of the doped N-type GaN layer is 2.5 3 μm,Growth temperature is 1,030 1080 DEG C.The utility model uses gradual change p-type AlGaN layer, can reduce polarity effect, weakens electronic barrier layer EBL to the band curvature between P-type layer so that Red Shift Phenomena is improved, and shorter emission wavelength is presented, and luminous intensity also increases therewith. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106910802-A |
| priorityDate | 2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.