http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-206385277-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d331d03b67a562c41a9ed794c1da0498 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-14 |
| filingDate | 2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53da671ff0f67dc7a7c0bd240dc1e62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6d9a8d9f9595b5ca86963d4cf0a9939 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28ed8f44d79b5114aadbcb08cfd538c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92955b26332f2befdc4a5971267e75ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6878a1c939a95a254ef2bd0413f419ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_132410c252a31003566714874f7bf558 |
| publicationDate | 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-206385277-U |
| titleOfInvention | A kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field |
| abstract | The utility model discloses a kind of silicon solar hypoxemia, low light attenuation monocrystal thermal-field, working chamber including crystal pulling furnace and the graphite heater in working chamber, graphite heater uses the primary heater and the secondary heater corresponding to crucible bottom corresponding to crucible middle and upper part, primary heater and secondary heater are respectively by two power supply independent controls, in the material stage, primary heater and secondary heater are while open work, and the power ratio of primary heater and secondary heater is 2：1~3：1, in crystal pulling phase, the power of reduction primary heater and secondary heater, the power of primary heater is more than the power of secondary heater, silicon material is set to be in crystalline temperature, temperature of thermal field during crystal pulling whole by primary heater major control, makes thermal convection current remitted its fury, slows down the reaction speed of quartz crucible, reduce the oxygen and impurity produced by being chemically reacted due to quartz crucible and silicon, silicon rod oxygen content, oxygen alms giver's silicon chip yield ratio are reduced, silicon rod minority carrier life time is improved, the LID of cell piece link is decayed reduces. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106521624-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023185537-A1 |
| priorityDate | 2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.