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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
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filingDate 2017-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79fa9052f2c83a1c8b1d873389ea306d
publicationDate 2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-206353538-U
titleOfInvention A kind of high-photoelectric transformation efficiency solar cell
abstract The utility model discloses a kind of high-photoelectric transformation efficiency solar cell, including:One p-type dope semiconductor substrates, substrate has first surface and the second surface relative with the first surface;One back electrode, is arranged at first surface, and with the first surface Ohmic contact;One first convex tapered structure, the first convex tapered structure is formed by graphical treatment in second surface;One n type diffused layer, is formed by phosphorus diffusion;One transparent gate electrode, is made up of conductive transparent material, is arranged above n type diffused layer, and with n type diffused layer Ohmic contact;One transparent anti-reflection layer, is made of clear material;Positive electrode window region is etched with the transparent anti-reflection layer, the positive electrode window region bottom is connected with transparent gate electrode upper epidermis, and the positive electrode window region is provided with the positive electrode with transparent gate electrode Ohmic contact.It is roughened structure by improving substrate surface, and micro-nano concentrator lens structure is etched into transparent anti-reflection layer, greatly improves photoelectric transformation efficiency.
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type http://data.epo.org/linked-data/def/patent/Publication

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