http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-205985066-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc4e13141d402ceb885f368dfa042348 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2016-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4efc9a3f8cefb3a81e3543bdab3250fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fba5a65b9aebecb5bf26369cdd794fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_820e7c5a62de032c69f84b045060ec50 |
| publicationDate | 2017-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-205985066-U |
| titleOfInvention | Emitting diode epitaxial structure with little PN junction quantum is built |
| abstract | The utility model discloses an emitting diode epitaxial structure with little PN junction quantum is built, supreme sapphire substrate, gaN buffer layer, N type gaN conducting layer, multi -quantum well active area and the P type gaN conducting layer of including under this emitting diode structure is followed, its characterized in that the quantum well active area includes quantum well and quantum base layer, the quantum is built the layer and comprises P type doping quantum base and N type doping quantum base. The utility model discloses a little PN junction quantum is built and is replaced traditional quantum to build, can shield the polarized electric field of quantum well, reduces the separation of electron hole wave function, improves emitting diode's luminous efficacy. |
| priorityDate | 2016-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.