http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-205944090-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-22 |
| filingDate | 2016-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ca03d333e319df96c66b88b1e375639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d8e9bf14d9f12671d60b812fd85e7a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da7f2dfd4166e5daf5112e87373fe434 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df608466fe44e92ea59cc06d8a0145b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf54b57a256c4237f15447e3b2301dd7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cbf821514a04c7aafb632b53b67c954 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b4a5eb5130004de70c72ca1b3fa5e3 |
| publicationDate | 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-205944090-U |
| titleOfInvention | Humidity sensor |
| abstract | The utility model relates to a humidity sensor. A humidity sensor has sensing element and refers to the subassembly. Humidity can be instructed through the transistor that the use has an upper portion grid dielectric layer to every subassembly, upper portion grid dielectric layer has according to exposing and the dielectric constant of change the moisture change. Sensing element can have it and expose in the upper portion of surrounding environment grid dielectric layer. It can have its not upper portion grid dielectric layer that exposes to any environment to refer to the subassembly. Output can utilize difference electron device to handle to the sensing with the reference transistor to a humidity that during exports and instructs the surrounding environment is provided. Differential processing can reflect the output that has high common mode rejection ratio. The example of the upper portion grid dielectric layer of deposit on thin grid dielectric layer can be the hydrophobic polymer material. Can use other materials with replacing. The subassembly can be the transistor circuit who utilizes the integrated circuit technique to make with handling electron device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108152336-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10585058-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110651180-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11262325-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111141795-A |
| priorityDate | 2015-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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