http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-205808982-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_179eae39e4b29e9851cd12f4d6a1ef26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2016-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edead55ed3445106b8ef7112fc121d7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d16a48a91a73415ac0d3fc54896be4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5e7041481e3829f0762dc66029bf819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1169753e16e2443df862548bb9edba6 |
| publicationDate | 2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-205808982-U |
| titleOfInvention | Semiconductor gas sensor chip and sensor |
| abstract | This utility model discloses a kind of semiconductor gas sensor chip, sensor and preparation method thereof, and wherein, semiconductor gas sensor chip includes: substrate, including the first substrate surface being oppositely arranged and the second substrate surface；It is arranged at the zone of heating on the first substrate surface and functional layer and is arranged at the heat insulation layer on the second substrate surface；Insulating medium layer, is arranged between functional layer and zone of heating；Zone of heating relatively functional layer is near the first substrate surface, and zone of heating includes that be electrically connected with each other adds thermal resistance and add thermode, and functional layer includes signal sensing electrode and the gas sensitive layer being electrically connected with each other.Compared with prior art, the semiconductor gas sensor chip that this utility model provides, it is fixed on pedestal formation semiconductor gas sensor by heat insulation layer, compared with conventional semiconductors gas sensor preparation technology, there is less package dimension and lower power consumption；Compared with MEMS gas sensor preparation technology, preparation technology is simpler. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106018484-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020215654-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108663417-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108663417-A |
| priorityDate | 2016-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.