http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-205159317-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_803adbbdc79135470bdb763e6aab9d29 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-16152 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-552 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-06 |
| filingDate | 2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0afeee1e65f5662da0e2dd6052353466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6842ab27cf2e2c0068cc778b97e78c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d4d86fb3c84dd5ca43903e316ce9cd2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e6ac930e713aee51621a7cc55498b82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29983d72c1a2cd3cf08d33e226a23dde http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_533bd8439981e4904dd6ff1c8bea5669 |
| publicationDate | 2016-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-205159317-U |
| titleOfInvention | Anti -interference semiconductor integrated circuit |
| abstract | The utility model discloses an anti -interference semiconductor integrated circuit comprises pipe cap, tube base, pin, semiconductor integrated circuit chip, and the pipe cap encapsulates on the tube base, the characterized by pipe cap has metal outer layer and ceramic inlayer, and the tube base has metal level and ceramic base member, and the tube base top layer studs with the pottery, the pin adopts metal pin -attached, metallic bonding silk bonded is on the tube base metal level or adopt the pombe welding integrated on the tube base metal level for the semiconductor integrated circuit chip. The utility model discloses a tube base and pipe cap skin are the metal level, the inlayer is ceramic material, and it obtains combined material to combine the two, realizes the electromagnetic shield from the low frequency to the high frequency, make the inside and outside electromagnetic environment of encapsulation reach good isolation, promotion semiconductor integrated circuit's interference killing feature. The utility model discloses a device wide application is in fields such as space flight, aviation, boats and ships, electron, communication, medical equipment, industrial control, the miniaturization of specially adapted equipment system, high frequency, highly reliable field. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108063130-A |
| priorityDate | 2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.