http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-204680649-U

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filingDate 2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0752346dc70c8df04e11e52cab384aed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fea2f6a3e137c913b7d47b15ebdaf316
publicationDate 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-204680649-U
titleOfInvention For the compound mask that energetic ion injects
abstract This patent discloses a kind of compound mask injected for energetic ion.Mask in this patent is a kind of compound photoresist mask with three-decker, and photoresist mask pattern is produced between implant blocking layer deielectric-coating and top layer sacrificial dielectric film by this mask, injects mask as energetic ion.The compound mask of this patent can avoid the chap denaturing problem of photoresist mask under high-energy ion bombardment, and mask removes noresidue, ensures chip surface cleanliness factor, improves device performance.
priorityDate 2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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