http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-204167345-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1581dea8fd53f67771772e9108c04b0f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccb8143ed3df899dc310cb8ab9b80692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4381bcbccea2ee26dae44e66f3f6888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a01a927904d0988db31c5e68cb366f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71412b30e3c87180af1e9c3eafd21e42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc96d5115a53d026e2694b59407b71a5 |
| publicationDate | 2015-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-204167345-U |
| titleOfInvention | A kind of nitride LED epitaxial structure using SiC substrate |
| abstract | The utility model relates to a kind of nitride LED epitaxial structure using SiC substrate, comprise SiC substrate, the derivative film of two dimension and nitride epitaxial layer, described two dimension derives film between described SiC substrate and described nitride epitaxial layer, and described two dimension derives film is attached on the surface of described SiC substrate, described nitride epitaxial layer is attached to described two dimension and derives on film; Wherein, described two dimension derives film and is made up of one deck or two-layer above two-dimensional nano sheet material, and described two-dimensional nano sheet material comprises any one or two or more combinations in Graphene, silene, hexagonal boron nitride and three boron carbides.The utility model nitride LED epitaxial loayer and SiC substrate making one deck or two-layer more than two dimension derive film, make it can ensure carrying out smoothly of nitride epitaxial layer growth, being separated of substrate and epitaxial loayer can be contributed to again at stripping process, greatly simplifie stripping process, improve yield, reduce cost. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107452841-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110246943-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110246943-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107452841-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104393128-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107369748-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104393128-A |
| priorityDate | 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.