http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-203772418-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6e25d4adc71e76de23c4d8f4a486136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-02 |
| filingDate | 2014-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_312e989d14de91e4603383b549dc178f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edd6217e80567bb2f275f44f2a8b4359 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c24db963b58bfd57d95b1dba5041a45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb54a81f31d94498cc4351975822628c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2025818b2fa744b6084a45708bd29e27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74dcd69692dffef9456ba2a7224bf9c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_629793cebe87fa3441860ab85c84c570 |
| publicationDate | 2014-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-203772418-U |
| titleOfInvention | Absorbing layer structure for non-refrigerating long-wave infrared detector |
| abstract | The utility model discloses an absorbing layer structure for a non-refrigerating long-wave infrared detector. The absorbing layer is arranged on thermosensitive film of the detector, and is composed of a first dielectric layer, a second metal layer and a third insulating layer in sequence from up to bottom. The absorbing layer is characterized in that: the first dielectric layer is silicon nitride film with good thermal conductivity and high corrosion resistance, the first dielectric layer is served as an antireflection layer and a device protective layer, and the thickness of the film ranges from 1000nm to 1200nm; the second metal layer is a nickel-chromium alloy layer with the thickness ranging from 8nm to 12nm, and is served as an absorbing layer of infrared bands; and the third insulating layer is silicon dioxide film with the thickness ranging from 50nm to 100nm, and is served as the insulating layer between the thermosensitive film and the metal layer. The absorbing layer is simple in preparation technology, is easily compatible with the existing microelectronic technology, and is applicable to unit, linear array and area array infrared detectors. The infrared absorbing layer provided by the utility model has the advantages of firm attachment, high corrosion resistance, good repeatability, low specific heat capacity, excellent heat transfer performance, and more than 85% absorptivity at the infrared band ranging from 8 to 14 micrometer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110160658-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103852171-A |
| priorityDate | 2014-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.