http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-203653745-U

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fefd66fdbc3870bbaa8e5a4f87bdb0a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
filingDate 2013-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24732eaba657ed84f8f15d3f454d3d95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c577af579a4c263736949c53614c6fdf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_452f286ce10ff26b9096dcda29e505cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33864a8bf6b68ad7c855563aa7ef9737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ac86b0af4162fffe4a0ad47857271e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1534cc4b87d8d23e1ad2757abe7aa516
publicationDate 2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-203653745-U
titleOfInvention Crystal growing furnace via pulling method
abstract The utility model discloses a crystal growing furnace via a pulling method. The crystal growing furnace is characterized by comprising a furnace body and a crucible (2) which is arranged at the center of a furnace chamber (5), wherein the inside of the furnace body is hollow so as to form the furnace chamber (5); and the crucible (2) is connected with a seed crystal rod (4) which is coaxially arranged in the furnace chamber (5) so as to grow a crystal (3) in the crucible (3). The crystal growing furnace is characterized in that the inner wall of the furnace chamber (2) positioned at the upper part of the crucible (2) is in a certain conicity so as to form a circular truncated cone barrel structure. According to the crystal growing furnace, the three-dimensional effect of heat transfer in a flowing manner in the furnace chamber via the pulling method can be effectively controlled, so that a good temperature environment is formed around the crystal; and meanwhile, a solid-liquid interface during a crystal growth process is in a good temperature gradient. Based on the novel furnace chamber structure, the generation of dislocation or rupture of the crystal during the growth process is reduced. Thus, the quality of the crystal is improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114959869-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114959869-A
priorityDate 2013-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9458
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414865371

Total number of triples: 20.