http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-203503683-U
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6772d32aebb7f7b6611593a36b21c4 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
filingDate | 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ea3c95ecddfbc648c9036e599945f6e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7603ce2b4383aa1321982ec7823c8808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a48b9bba8dcb2edef25a1f6087563fc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af3264554761b55f76d30d958d3c47db |
publicationDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-203503683-U |
titleOfInvention | LED (light-emitting diode) chip with multiple light-emitting areas |
abstract | The utility model relates to the technical field of semiconductors, and particularly relates to an LED (light-emitting diode) chip with multiple light-emitting areas. The LED chip is characterized in that the chip is formed by laminating a sapphire layer, N-type gallium nitride layers, a multilayer quantum well layer, a P-type gallium nitride layer and a transparent conducting layer from the bottom up in a stepped mode, the sapphire layer is of a cubic structure, a composite layer structure formed by the first gallium nitride layer, the multilayer quantum well layer and the P-type gallium nitride layer is arranged the top part of the sapphire layer and provided with a gap, the composite layer structure is of a stepped structure along two sides of the gap, a part, which is exposed from the gap, of the top part of the sapphire layer is provided with the second N-type gallium nitride layer, the upper surface of the second N-type gallium nitride layer is provided with a negative electrode, the top part of the composite layer structure is provided with the transparent conducting layer, and the upper surface of the transparent layer is provided with a positive electrode. According to the utility model, an LED chip with higher light emitting efficiency is acquired through improving the overall structure of the chip, such as, selection of the stepped structure, additionally arranging a buffer layer in which components change gradually and designing an uneven side wall for the LED chip. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107968145-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593837-B2 |
priorityDate | 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.