http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-203503683-U

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6772d32aebb7f7b6611593a36b21c4
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
filingDate 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ea3c95ecddfbc648c9036e599945f6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7603ce2b4383aa1321982ec7823c8808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a48b9bba8dcb2edef25a1f6087563fc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af3264554761b55f76d30d958d3c47db
publicationDate 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-203503683-U
titleOfInvention LED (light-emitting diode) chip with multiple light-emitting areas
abstract The utility model relates to the technical field of semiconductors, and particularly relates to an LED (light-emitting diode) chip with multiple light-emitting areas. The LED chip is characterized in that the chip is formed by laminating a sapphire layer, N-type gallium nitride layers, a multilayer quantum well layer, a P-type gallium nitride layer and a transparent conducting layer from the bottom up in a stepped mode, the sapphire layer is of a cubic structure, a composite layer structure formed by the first gallium nitride layer, the multilayer quantum well layer and the P-type gallium nitride layer is arranged the top part of the sapphire layer and provided with a gap, the composite layer structure is of a stepped structure along two sides of the gap, a part, which is exposed from the gap, of the top part of the sapphire layer is provided with the second N-type gallium nitride layer, the upper surface of the second N-type gallium nitride layer is provided with a negative electrode, the top part of the composite layer structure is provided with the transparent conducting layer, and the upper surface of the transparent layer is provided with a positive electrode. According to the utility model, an LED chip with higher light emitting efficiency is acquired through improving the overall structure of the chip, such as, selection of the stepped structure, additionally arranging a buffer layer in which components change gradually and designing an uneven side wall for the LED chip.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107968145-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593837-B2
priorityDate 2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.