http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-203071074-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64994b8e74ef8a4682ec830d507057af |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7808 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate | 2013-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a370edb2aa5ca09728c2aa28c625ae2 |
| publicationDate | 2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-203071074-U |
| titleOfInvention | Integrated circuit |
| abstract | The utility model discloses an integrated circuit. The integrated circuit comprises power MOSFET, JFET, a detection pin, a source electrode pin, a grid electrode pin and a drain electrode pin, wherein the power MOSFET possesses a drain electrode, a grid electrode and a source electrode; the JFET possesses the drain electrode, the grid electrode and the source electrode; the drain electrode of the JFET is coupled to the drain electrode of the power MOSFET; the JFET and the power MOSFET share a drift region on a substrate of the integrated circuit; the detection pin is coupled to the source electrode of the JFET; the source electrode pin is coupled to the source electrode of the power MOSFET; the grid electrode pin is coupled to the grid electrode of the power MOSFET; the drain electrode pin is coupled to the drain electrode of the power MOSFET and the drain electrode of the JFET. By using the integrated circuit, through a simple making technology, a controller with a low voltage level is guaranteed to be capable of receiving a drain-electrode high voltage of the power MOSFET. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103022035-A |
| priorityDate | 2012-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 21.