http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-202968692-U

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0fcd5b715a1e8c35c61d29a77fcc926f
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
filingDate 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c78b881b26cb3e84667e25486fede4b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97fc54e8f4ccaab9b7561c5b7e559600
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33711be2d63fd3407488e6500e24f072
publicationDate 2013-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-202968692-U
titleOfInvention Device for forming aluminum-doped zinc oxide (AZO) film on substrate
abstract The utility model relates to a device for forming an aluminum-doped zinc oxide (AZO) film on a substrate. The device is characterized by comprising a vacuum reaction system, a discharging system, a power supply system, a heating temperature control system, a gas lead-in system, a pressure measuring system and an air suction system, wherein the vacuum reaction system comprises a vacuum reaction cavity; the discharging system is arranged in the vacuum reaction cavity and comprises two parallel electrode plates for generating plasma; the power supply system is connected with the electrode plates and supplies power for the electrode plates; the heating temperature control system comprises a reaction source heating platform and a substrate heating platform; the gas lead-in system is connected with the vacuum reaction cavity and leads carrier gas into the vacuum reaction cavity; the carrier gas is used for leading reaction source substances sublimated to be in the gaseous state to the surface of the substrate on the substrate heating platform; the pressure measuring system is used for measuring pressure change of the gas in the vacuum reaction cavity; and the air suction system is connected with the vacuum reaction cavity and sucks the reaction tail gas. The device can form the AZO film with uniform thickness on the substrate.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103014675-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103014675-B
priorityDate 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.