http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115275000-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
filingDate | 2022-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62a95fed0da039e5163d3bad2696b7f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e71470d4be29e1fcac8b0e88a0bd70bf |
publicationDate | 2022-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-115275000-A |
titleOfInvention | Diode device with programmable on-current and its array fabrication method |
abstract | The invention discloses a diode device with programmable conduction current, which includes a metal structure, a resistive structure and a semiconductor structure. The invention has ultra-high self-rectification ratio and stable unipolar resistance-switching characteristics. The density of states function of the semiconductor needs to contain at least one peak, which is located near the forbidden band, and can form a Schottky barrier at its interface, so that the device exhibits diode characteristics, thereby effectively suppressing bypass leakage current interference in the array. The resistive structure has unidirectional resistance and can perform erasing and writing operations in the direction of current conduction. The reliability of the self-rectification effect is improved. Based on the above structure, the present invention proposes two methods for directly preparing arrays on semiconductors and a method for preparing 3D array integration, and no external gate tube is required. The invention has the advantages of high integration, strong anti-interference ability and high CMOS compatibility. |
priorityDate | 2022-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.