http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115275000-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
filingDate 2022-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62a95fed0da039e5163d3bad2696b7f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e71470d4be29e1fcac8b0e88a0bd70bf
publicationDate 2022-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-115275000-A
titleOfInvention Diode device with programmable on-current and its array fabrication method
abstract The invention discloses a diode device with programmable conduction current, which includes a metal structure, a resistive structure and a semiconductor structure. The invention has ultra-high self-rectification ratio and stable unipolar resistance-switching characteristics. The density of states function of the semiconductor needs to contain at least one peak, which is located near the forbidden band, and can form a Schottky barrier at its interface, so that the device exhibits diode characteristics, thereby effectively suppressing bypass leakage current interference in the array. The resistive structure has unidirectional resistance and can perform erasing and writing operations in the direction of current conduction. The reliability of the self-rectification effect is improved. Based on the above structure, the present invention proposes two methods for directly preparing arrays on semiconductors and a method for preparing 3D array integration, and no external gate tube is required. The invention has the advantages of high integration, strong anti-interference ability and high CMOS compatibility.
priorityDate 2022-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.