http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115250111-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c6abba7e6f962390638c025fba24f11 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-023 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-0504 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17 |
| filingDate | 2022-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f2598c9b2aa534274426a1731288a45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eebd201e290acf2779583229a4c0758a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_636053322ca140cef315417681f06c1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e163329d513753665699c1f81fa6bbb7 |
| publicationDate | 2022-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115250111-A |
| titleOfInvention | Support structure for bulk acoustic wave resonators |
| abstract | The present invention describes a bulk acoustic wave resonator and a manufacturing process thereof. A stacked structure formed over a substrate including a piezoelectric thin film member, a first (eg, bottom) electrode coupled to a first side of the piezoelectric thin film member, and a second (eg, bottom) electrode coupled to a second side of the piezoelectric thin film member top) electrodes. A cavity is provided between the stack and the substrate. The resonator includes one or more planarization layers, including a first planarization layer surrounding the cavity, wherein a first portion of the first electrode is adjacent to the cavity, and a first portion of the first electrode is adjacent to the cavity. The two parts are adjacent to the first planarization layer. The resonator optionally includes an air reflector surrounding the perimeter of the piezoelectric film member. The stacked structure can resonate an electrical signal applied between the first electrode and the second electrode. |
| priorityDate | 2021-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449871035 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166598 |
Total number of triples: 24.