http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115241075-A

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filingDate 2022-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd0dc875ad2e64889ae5a084896b4210
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publicationDate 2022-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-115241075-A
titleOfInvention Semiconductor packaging structure and preparation method based on TSV interconnection
abstract The present invention provides a semiconductor packaging structure and preparation method based on TSV interconnection. One end of a TSV column is directly used as a connecting piece, which can reduce the preparation process of a metal connecting piece, thereby saving costs and reducing interconnection impedance. The packaging process of the TSV interposer; the second dielectric layer with the trench can be used as the exposed TSV pillar to protect the sidewall to improve the packaging stability; when the surface of the TSV pillar has an insulating layer, the first dielectric layer covering the TSV pillar is formed. Metal seed layers at both ends or etching to remove insulating layers can also improve metal interconnectivity.
priorityDate 2022-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.