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filingDate 2022-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def492197654cad760c2fd7dfec34406
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publicationDate 2022-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-115224227-A
titleOfInvention A kind of quasi-two-dimensional perovskite thin film and preparation method thereof
abstract The invention is applicable to the technical field of quasi-two-dimensional perovskite film preparation, and provides a preparation method of the quasi-two-dimensional perovskite film, comprising the following steps: dispersing raw materials in a polar solvent to prepare the quasi-two-dimensional perovskite film The precursor of the film; after the precursor is fully dissolved by heating and stirring, it is moved to a nitrogen-filled glove box for use; a layer of hole transport material is dispersed on the cleaned substrate through a glue machine, and then the substrate is moved to a nitrogen-filled In the glove box, the precursor is coated on the substrate, and the substrate is rotated to make the precursor evenly distributed on the substrate under the action of centrifugal force, gravity and magnetic force to form a precursor film; the precursor film is annealed, Growth of quasi-2D perovskite films on substrates. The present invention also provides a quasi-two-dimensional perovskite thin film prepared according to the above preparation method, the crystals are arranged along the same vertical direction, and have higher charge injection efficiency.
priorityDate 2022-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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