http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115224147-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a4a713894ac9f30dda1299300e99f80b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-054 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-054 |
| filingDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4529ff67f147dfa04dd8f2b454426fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cce734402b58eab9d8ac926ec5f7596c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8fe259418500db0ca7f6e94907b6a8a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05773dcd70ae140ca2c4038c49f66df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94cfa382588a0ce17728bf0c05b2ae2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a09a811169bfe4eb683684eb9d01fdf |
| publicationDate | 2022-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115224147-A |
| titleOfInvention | A light trapping structure suitable for InAs/GaAsSb quantum dot solar cells and preparation method thereof |
| abstract | The present disclosure provides a light trapping structure suitable for InAs/GaAsSb quantum dot solar cells, the light trapping structure includes: a plurality of light trapping units; the light trapping unit includes: a quadrangular pyramid frustum and a plurality of nanowires; the plurality of nanowires are located in the above-mentioned The upper surface of the truncated pyramid; several nanowires are in a curved state, and the bending angle of the end of each nanowire in contact with the upper surface of the truncated pyramid is smaller than the bending angle of the end away from the upper surface of the truncated pyramid. The light trapping structure of the present disclosure does not require complicated semiconductor processes or contact with very dangerous chemical reagents during preparation; the light trapping structure of the present disclosure is mainly suitable for InAs/GaAsSb quantum dot solar cells and most III-V solar cells. |
| priorityDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14770 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557771 |
Total number of triples: 24.