http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115224138-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232 |
| filingDate | 2022-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f3559e1bb1325511e56984b00ed4221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7ec1c71a475c4ec3ce03aac565c7d2d |
| publicationDate | 2022-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115224138-A |
| titleOfInvention | A horizontal pull-through germanium-silicon avalanche photodetector |
| abstract | The invention discloses a horizontal pull-through type germanium-silicon avalanche photoelectric detector. It includes a first passive area, a second passive area and an active area, the first passive area is connected to the second passive area through the active area, and the first passive area and the second passive area are formed by the input strip. The waveguide is formed with a tapered mode conversion region; in the active region, the germanium absorption region grows from the silicon intrinsic region as the absorption region of the detector; one side of the germanium absorption region is in sequence with the first charge collection region and the first ohmic contact The other side is connected to the charge area/avalanche amplification area, the second charge collection area and the second ohmic contact layer in sequence, and the first ohmic contact layer and the second ohmic contact layer are connected to the first electrode and the second electrode respectively. The invention adopts a horizontal structure, which can reduce the processing cost, improve the responsivity of the detector, and obtain an on-chip horizontal pull-through type germanium-silicon avalanche photodetector, which has the advantages of simple process, high responsivity, large bandwidth, high sensitivity and the like. |
| priorityDate | 2022-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.