http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115223946-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2021-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3995c745acbb914791942d6cffc12288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd82e11c7adb9033d1d3fa334cac3b07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d53a4734cbbffdecaa169ef4c792aed3 |
| publicationDate | 2022-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115223946-A |
| titleOfInvention | A semiconductor memory device and its manufacturing method |
| abstract | Embodiments of the present invention relate to a semiconductor memory device and a method for manufacturing the same. The method includes the following steps: providing a substrate, where the substrate includes a first source/drain layer, a channel layer and a second source layer that are sequentially stacked from bottom to top electrode/drain layer; a word line trench is formed in the substrate, and the bottom of the word line trench reaches the first source/drain layer; a first protective layer and a second protective layer are formed in the word line trench; The first protective layer covers the bottom of the word line trench, and the top surface of the first protective layer is flush with the top surface of the first source/drain layer, or lower than the top surface of the first source/drain layer; The second protective layer is formed on the sidewalls of the word line trenches and at least partially covers the sidewalls of the second source/drain layer; the word line trenches are etched laterally so that the word line trenches are not covered by the first protective layer. A recessed structure is formed on the sidewall covered with the second protective layer; a word line structure is formed on the surface of the recessed structure. |
| priorityDate | 2021-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279 |
Total number of triples: 18.