| abstract |
A semiconductor device includes: active patterns each protruding from a substrate and extending in a first direction substantially parallel to an upper surface of the substrate; isolation patterns disposed on the substrate and covering a lower side of each active pattern a wall; a gate structure extending in a second direction over the active pattern and the isolation pattern, wherein the second direction is substantially parallel to the upper surface of the substrate and intersects the first direction; and a separation pattern disposed over the isolation pattern , wherein the separation pattern contacts an end of the gate structure in the second direction. The gate structure includes a gate insulating pattern, a gate barrier and a gate electrode that are sequentially stacked. The gate insulating pattern and the gate barrier are not formed on the sidewalls of the separation patterns, and the gate electrodes contact the sidewalls of the separation patterns. The gate insulating pattern, the gate barrier, and the gate electrode are sequentially stacked on the upper surface of the portion of the isolation pattern adjacent to the sidewall of the isolation pattern, and the gate insulating pattern contacts the upper surface of the portion of the isolation pattern. |