| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2465fa191b1508e6b9537b087032b271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_836cc898de1e42032981c16185be642c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2022-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_091796053a6a8a63fc7f7affc0262e9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92c013841fe159938ace847d864cab17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_777bb176068ad97e471a52f56670a6e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38367db862e2a91f7c0b80d6128e346e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73936b9be2089edac955877577be82f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9eb2c9770221458b05cdf5362e6f695 |
| publicationDate |
2022-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-115207776-A |
| titleOfInvention |
A kind of semiconductor epitaxial structure and its growth method |
| abstract |
The present application relates to the field of semiconductor technology, and in particular, to a semiconductor epitaxial structure and a growth method thereof. The semiconductor epitaxial structure includes: a semiconductor substrate layer; a lower waveguide layer located on the semiconductor substrate layer; an active region located on the lower waveguide layer, the active region including an indium gallium aluminum arsenic quantum well layer and a potential barrier layer, the barrier layer is located on both sides of the quantum well layer, and the barrier layer is one or more combinations of gallium arsenide, aluminum gallium arsenide or gallium arsenide phosphorus; located in the active region on the upper waveguide layer. The present application avoids the segregation of indium in the active region at high temperature, and improves the stability of the laser. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116316073-A |
| priorityDate |
2022-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |