http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115206877-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_90da52f31c0d9b43d76c6d6cd90f56c2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2022-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebef30d156674c20f91fd75f0cc64b56 |
| publicationDate | 2022-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115206877-A |
| titleOfInvention | A through-silicon via structure and method of making the same |
| abstract | The invention relates to a through-silicon via structure, comprising: a through-hole located in a substrate; a barrier layer arranged on the inner wall of the through-hole; a seed layer covering the barrier layer; an insulating layer covering the through-hole the seed layer on the sidewall of the hole; and a filling layer filling the through hole and connected with the seed layer. The invention also relates to a manufacturing method of the through-silicon via structure. The inside of the through-silicon via does not contain voids, and has good stability and connectivity, and the through-silicon via has a ring-shaped capacitor structure, which expands its application range. |
| priorityDate | 2022-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764 |
Total number of triples: 15.