| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1042 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91219291fc7e22efc5cc0e6ef3afe4c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a222bac253530bfe22acd8f85e00938
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_151c59d60c06a6a5b5273ee4893512a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0da58f265e5ff6d83ce2f21d8a851f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96fa0b4cbcb151619e5d68ebc691f192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ad4c0118c49eab6bc6abb3cb3ce76e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52eadeb76a3315d2a92e5c252e4fd530 |
| publicationDate |
2022-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-115206872-A |
| titleOfInvention |
Semiconductor processing method |
| abstract |
A substrate processing method for forming an air gap includes: forming a deposition inhibitor site in a lower space between a first protrusion and a second protrusion; and forming a film forming site and a layer on the first protrusion and the second protrusion an interlayer insulating layer, wherein the interlayer insulating layer is selectively formed in the upper space between the first protrusion and the second protrusion by depositing inhibitor sites and a film-forming layer, thus between the first protrusion and the second protrusion form an air gap. |
| priorityDate |
2021-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |