| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32899
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2017-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59117259593ac2ccc5e35de4265f574e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c99dbb3dc2acf46009a6c0801af51a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38796c2465a29ae4b912c8e9434db1f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e341e451128a61b3dfe79299756c3470
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45ad460e52cb6b124debc574cbe012ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36e4a5391e7596029db45c5a3a2368cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cefe12ecebae7ad1def9d44bb26ecb59 |
| publicationDate |
2022-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-115206765-A |
| titleOfInvention |
Plasma Enhanced Annealing Chamber for Wafer Outgassing |
| abstract |
Embodiments described herein provide thermal substrate processing apparatuses with in-situ cleaning capabilities. The apparatus described herein can include a thermal processing chamber defining a processing volume and within which the substrate support can be disposed. One or more remote plasma sources can be in fluid communication with the processing volume, and the remote plasma sources can be configured to deliver plasma to the processing volume. |
| priorityDate |
2016-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |