http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115188706-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2022-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3d0978fe479dc91f3606207c392fe66 |
| publicationDate | 2022-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115188706-A |
| titleOfInvention | Semiconductor structure and method of forming the same |
| abstract | A semiconductor structure and a method for forming the same, wherein the forming method comprises: providing a semiconductor substrate, after forming a plurality of active regions on the semiconductor substrate, etching the active regions, in the active region forming at least one trench; forming a silicon source layer on the sidewall and bottom surface of the trench; performing a selective deposition process based on the silicon source layer, forming a first silicon oxide layer on the sidewall surface of the trench, A second silicon dioxide layer is formed on the bottom surface of the trench, and the thickness of the second silicon dioxide layer is smaller than that of the first silicon oxide layer. The method of the present application can prevent the leakage current problem at the sidewall of the trench, and the thickness of the second silicon dioxide layer at the bottom of the trench is relatively thin, which can improve the source-drain current value (IDS) and improve the performance of the trench transistor . |
| priorityDate | 2022-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.