| abstract |
Methods of selectively depositing metal-containing films, the methods comprising: providing a surface having a plurality of materials exposed thereon simultaneously; and exposing the surface to vapors of a metal-containing film-forming composition comprising: The precursor of: L x M (-N(R)-(CR' 2 ) n- NR" 2 ) where M is Group 12, Group 13, Group 14, Group 15, Group IV or Group V group element; x+1 is the oxidation state of M; L is an anionic ligand independently selected from dialkylamines, alkoxyl groups, alkylimines, bis(trialkylsilylamines), amidines, β-diketonate, ketone-imine, halide, etc.; R, R" are each independently C 1 -C 10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl R' is H or C 1 -C 10 straight-chain, branched or cyclic alkyl, alkenyl or trialkylsilyl; n=1-4, wherein at least one of these materials is at least partially is blocked by the blocking agent from depositing the metal-containing film by a vapor deposition process. |