| abstract |
The invention discloses a vertical metal-semiconductor-metal (MSM) structure photoelectric imaging system based on a semi-insulating 4H-SiC substrate. The device is based on a vertical structure Al or TiN electrode silicon carbide photodetector array (1) as the core, and includes a voltage measurement module, a scan gating control module, an operation/display module and a power supply module, forming a semi-insulating type Vertical MSM structure electro-optical imaging system on 4H‑SiC substrate. The system can image broad spectral patterns from ultraviolet to near-infrared, in which one element of the vertical structure Al or TiN electrode silicon carbide photodetector array is one pixel. For the entire photodetector array, the scanning gating control module is responsible for scanning and gating each pixel point, and the voltage measuring module is responsible for measuring the current. The collected data is saved, processed and displayed by the operation/display module, and finally the pattern imaging function is completed. |