http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115172271-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_386edcf52001ff8bc7805d863b0f0d95 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2022-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e8cfb47bf7ecf00359bcd22e9f2bd4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3e3c08a04c9d0c8357621eedf928e58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a82f6b5909391f04c970abd8c77d1e49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa9e4bdb1028257f920bb21c0a03ce85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0832805e9c38d0261a339d667ac1065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_595f8e0cb9551d80d7a9dd8693f0cdea |
| publicationDate | 2022-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115172271-A |
| titleOfInvention | A kind of metal interconnect structure and preparation method |
| abstract | The invention provides a metal interconnection structure and a preparation method. The preparation method includes the steps of: depositing a metal material layer and a photoresist layer on a dielectric layer in sequence; then patterning the photoresist layer to obtain a patterned photoresist layer The layer is a mask to etch the metal material layer to form a metal layer, and the top corner of the metal layer is in the shape of a rounded corner; finally, a second dielectric layer is deposited to cover the metal layer. Among them, the use of dry etching includes two stages. In the first stage, the consumption of the photoresist layer is enhanced by reducing the etching selection ratio, and at the same time, a suitable etching gas is selected to form the edge of the photoresist layer as Rounded corners; in the second stage, the etching selection ratio is increased to increase the consumption of the metal material layer. In this stage, as the edge of the photoresist layer gradually shrinks, the exposed metal layer is also gradually etched , and finally the top corner of the metal layer is formed into a rounded shape. Therefore, problems such as cracks caused by stress concentration are avoided, the performance and service life of the device are improved, and the stability is improved. |
| priorityDate | 2022-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.