| abstract |
The invention discloses a doped graphene field effect transistor sensor. The sensor comprises graphene between gold electrodes, a thermally denatured dopant on the surface of the graphene and a liquid gate reaction cavity of the sensor. The invention also discloses a preparation method of the doped graphene field effect transistor sensor. The doped graphene field effect transistor sensor disclosed by the invention has the characteristics of high detection sensitivity, short detection response time, simple sensing detection and low cost, and is successfully applied to the detection of cancer biomarker neuron-specific enolase (NSE). , which is of great significance for the early screening and diagnosis of cancer biomarker NSE. |