http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115148705-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
filingDate 2022-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b66eed94b9e9ea2a10f0ee67d6e497d8
publicationDate 2022-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-115148705-A
titleOfInvention Semiconductor structure and method of making the same
abstract Embodiments of the present disclosure disclose a semiconductor structure and a method for fabricating the same. The semiconductor structure includes: a substrate including a plurality of active regions; a bit line structure located above the active regions, the bit line structure including a plurality of bit lines extending along a first direction and a plurality of contact plugs, the contact plugs electrically connecting the bit lines and the active region, the first direction being parallel to the surface of the substrate; an isolation structure, the isolation structure includes a first insulating layer, a second insulating layer and a third insulating layer; the first insulating layer includes a first part and a second part located under the first part; the first part covers at least The side wall of the bit line, the second part covers at least the side wall of the contact plug; the second insulating layer covers the surface of the second part, and the third insulating layer covers at least the first part. part of the surface.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116568031-A
priorityDate 2022-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336883
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545355
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559362
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426694112
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23932
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14767304
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419405613
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336889
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099666
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID93091
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977

Total number of triples: 40.