http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115132827-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36 |
| filingDate | 2022-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10216e245ae49ae311bfb2527709b723 |
| publicationDate | 2022-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115132827-A |
| titleOfInvention | Semiconductor structure and method for making the same |
| abstract | Embodiments of the present disclosure relate to a semiconductor structure and a method for fabricating the semiconductor structure. The semiconductor structure includes: a substrate; a semiconductor pillar located on the substrate, the semiconductor pillar having a channel region and first source and drain regions located on opposite sides of the channel region, and The second source and drain regions; the semiconductor column further includes: a first doping region, the semiconductor column of the first doping region surrounds a part of the side surface of the semiconductor column of the first source and drain region, and the semiconductor column of the first doping region is connected to the channel The semiconductor columns of the first doping region are connected to each other, the doping ion type of the first doping region is different from that of the first source and drain regions, and the semiconductor columns of the first doping region are grounded. The embodiments of the present disclosure are beneficial to suppress the floating body effect of the semiconductor structure. |
| priorityDate | 2022-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.