http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115117086-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate | 2022-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c27a209b996cae08f6aeb81b5f7859c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_758f9fafa2998c2c7697cee21fb89f63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f259e059d57793ed920d9f2e20826eea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2758a56cc221d88dbf8fe38fb2ad8f1d |
| publicationDate | 2022-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115117086-A |
| titleOfInvention | Methods of forming microelectronic devices and related microelectronic devices, memory devices, and electronic systems |
| abstract | The present application relates to methods of forming microelectronic devices and related microelectronic devices, memory devices, and electronic systems. A method of forming a microelectronic device includes: forming a first stack structure including alternating levels of insulating structures and other insulating structures; forming strings of memory cells through the first stack structure; forming a second stack structure over the first stack structure forming a first custom reticle specific to the observed amount of deflection of the guide post based at least in part on the amount of deflection of the guide post observed within the first stack structure; using the first custom reticle to form an extension through the openings through the second stack structure and over some of the memory cell strings, wherein the centers of the openings over the memory cell strings are aligned with the The centers of the uppermost surfaces of memory cell strings are at least substantially aligned; and upper guide posts are formed extending through the second stack structure and over some of the memory cell strings. |
| priorityDate | 2021-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.