| abstract |
The present invention relates to a method for manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium. The subject is to obtain a manufacturing method of a semiconductor device capable of sustaining selectivity. The method for manufacturing a semiconductor device includes: a step of supplying an adsorption inhibitor for heating a wafer (100) in a processing chamber to a first temperature and supplying an adsorption inhibitor to adsorb the adsorption inhibitor to a substrate (100a) of the wafer; After the process, the wafer is heated to a second temperature higher than the first temperature and a process gas is supplied to form a process gas supply process of forming a SiN film on the substrate (100b), which is another part of the wafer to which the adsorption inhibitor is not adsorbed; and After the process gas supply step, an adsorption inhibitor removing step of removing the adsorption inhibitor adsorbed to the substrate of the wafer by heating the wafer to a third temperature higher than the second temperature. |