| abstract |
The present invention relates to a manufacturing method of a semiconductor device, a substrate processing method, a recording medium, and a substrate processing apparatus. The present invention can improve the properties of a film formed on a substrate. The manufacturing method of the semiconductor device of the present invention includes (a) and (b), (a): by performing a cycle of sequentially performing the following (a-1), (a-2) and (a-3) a predetermined number of times, A step of forming a nitride film containing a predetermined element on a substrate, (a-1) a step of supplying a first source gas containing a predetermined element to the substrate, (a-2) supplying a predetermined element to the substrate and having a thermal decomposition temperature higher than the first source gas A step of a second source gas with low source gas, (a-3) a step of supplying a nitriding gas to the substrate, (b): supplying an oxidizing gas to the substrate, oxidizing the nitride film formed in (a), and modifying it This is a step of forming an oxide film containing a predetermined element. |